Plenary and Invited Speakers

ICPS-28, Plenary Speakers
L. Samuelson	Lund Univ., Sweden	Semiconductor Nanowires: from self-assembly to quantum devices
R. Chau	Intel, USA	Frontiers in Device and Process Nanotechnology
A. Geim	Univ. Manchester, UK	Electronic Properties of Graphene
S. Noda	Univ. Kyoto, Japan	Photonic Crystals for Manipulation of Photons
C. Marcus	Harvard Univ., USA	Quantum Control of Spin in a Two-Electron Double Dot
S. Tarucha	Univ. Tokyo, Japan	Control over spin configurations and correlation effects in quantum dots
A. Imamoglu	ETH Zurich, Switzerland	Semiconductor cavity quantum electrodynamics for quantum information processing
B. Halperin	Harvard Univ., USA	Spin-Charge Separation, Tunneling, and Spin Transport in One-Dimensional Metals

ICPS-28, Invited Speakers
Pablo Jarillo-Herrero	Kavli Inst. Delft, The Netherlands	Quantum dots in carbon nanotubes
Phaedon Avouris	IBM, New York, USA	Carbon nanotube electronics and optoelectronics
Le Si Dang	Univ. J. Fourier, Grenoble, France	Towards Bose-Einstein condensation of microcavity polaritons ?
Khaled Karrai	Univ. Munich, Germany	Laser cooling of a microlever
Ulrike Woggon	Univ. Dortmund, Germany	Single semiconductor nanocrystals: physics and applications
G. Yusa	NTT Basic Research Laboratories, Atsugi, Japan	Nuclear spin control by a point contact
Bahram Jalali	UCLA, Dept. of Electrical Engineering, USA	Raman based Mid-IR Si-photonics
David Williams	Hitachi Cambridge Laboratory, UK	Charge q-bit operation of an isolated double quantum dot
Jonathan J. Finley	TU Munich, Germany	Probing charge and spin excitations in quantum dot molecules
Vittorio Pellegrini	Scuola Normale Superiore, Pisa, Italy	'Seeing' emergent phases in quantum Hall double layers
Daniel Loss	University of Basel, Switzerland	Quantum computation with quantum dots
Andrew Shields	Toshiba, Cambridge, UK	Single photon technology based on quantum dots
Lu J. Sham	UC- San Diego, USA University of Hongkong	Optical control of spins in semiconductor quantum dots
Pascale Senellart	LPN Marcoussis, France	Strong coupling regime for a single quantum dot in an optical microcavity
Lucien Besombes	CNRS Grenoble, France	Optical probing of the spin state of a single magnetic atom in a self-assembled quantum dot
Vanessa Sih	Univ. of California at Santa Barbara, USA	Imaging and controlling the spin Hall effect in two-dimensional electron gases
Carlo Sirtori	Univ. Paris 7, France	Terahertz generation and frequency mixing in quantum cascade structures
M. Kawasaki	Tohoku University, Japan	ZnO ultraviolet light-emitting diodes
Karl Leo	Univ. Dresden, Germany	Highly efficient Organic Semiconductor Devices
S. C. Crooker	Los Alamos National Laboratory, USA	Imaging spin transport in lateral ferromagnet/semiconductor structures
Henning Riechert	Infineon, Munich, Germany	Growth and material physics of InGaAsN for novel devices
Nikolay Akopian	Physics Department, Technion - Israel Institute of Technology, Haifa, Israel	Entangled Photon Pairs from Semiconductor Quantum Dots
Marilia Caldas	Instituto de Física, Universidade de São Paulo, Cidade Universitária, São Paulo, Brazil	Trimming and taming silicon surfaces: a first-principles study
Guillaume Cassabois	Laboratoire Pierre Aigrain - Ecole Normale Supérieure, Paris, France	Motional narrowing in a semiconductor quantum dot
Cristiano Ciuti	Laboratoire Pierre Aigrain, Ecole Normale Supérieure, Paris, France	Cavity quantum electrodynamics of semiconductor intersubband transitions in the ultra-strong vacuum Rabi coupling regime
Klaus Ensslin	Solid State Physics Laboratory, ETH Zurich, ETH Hönggerberg, Zurich, Switzerland	Is inelastic tunneling phase coherent?
Grzegorz Grabecki	Institute of Physics, Polish Academy of Sciences, Warszawa, Poland	Ballistic transport in hybrid nanostructures of paraelectric PbTe
Wolfgang Heiss	Institut für Halbleiter-und Festkörperphysik, Universität Linz, Austria	Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe
Shahal Ilani	Laboratory of Atomic and Solid State Physics, Cornell University, USA	Measurement of the Quantum Capacitance of Individual Carbon Nanotubes
Karl Fredrik Karlsson	Institut de Photonique et Electronique Quantiques, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland	New Excitonic States Observed in Semiconductor Quantum Dots Using Polarization Resolved Optical Spectroscopy
Frank Koppens	Kavli Institute of NanoScience, Delft University of Technology, Delft, The Netherlands	Coherent manipulation of single electron spins by electron spin resonance in coupled quantum dots
Peter Kratzer	Fritz-Haber-Institut der MPG, Berlin, Germany	Transition-metal silicides as novel materials for magnet-semiconductor heterostructures
Izhar Neder	Braun Center for Submicron Research, Dept. of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel	Controlled Dephasing and Phase Recovery via Cross-Correlation Measurements
Massimo Rontani	CNR-INFM National Research Center S3, c/o Dept of Physics, University of Modena, Italy	Imaging correlated wave functions of few-electron quantum dots: Theory and STS experiments
Giacomo Scalari	Institute of Physics, University of Neuchatel, Switzerland	Multi-wavelength operation and vertical emission in THz quantum-cascade lasers
Takeharu Sekiguchi	Department of Applied Physics and Physico-Informatics, KEIO University, Yokohama, Japan	Self-assembly of periodic nano-dots of silicon and germanium on a vicinal silicon (111) surface
Hadar Steinberg	Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel	Unidirectional Injection and Relaxation of Ballistic electrons in Clean Quantum Wires
Kyoichi Suzuki	NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa, Japan	Observation of subband standing waves in superlattices by low-temperature scanning tunneling spectroscopy
Kazuya Takemoto	Fujitsu Laboratories. Ltd., Atsugi, Japan	A New Approach for Single-Photon Source using Quantum Dots at Telecommunication Wavelength
Mike Thewalt	Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada	Direct Observation of the Donor Nuclear Spin in a Near-Gap Bound Exciton Transition: 31P in Highly Enriched 28Si
Vladislav Timofeev	Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow, Russia	Collective state in bose-gas of interacting interwell excitons
Jose Maria Ulloa	COBRA - Eindhoven University of Technology, Eindhoven, The Netherlands	Capping of InAs quantum dots studied by cross-sectional scanning tunneling microscopy
Chris Van de Walle	Materials Department, University of California at Santa Barbara, USA	Electronic structure of nitride surfaces
Luis Vina	Departamento de Fisica de Materiales, C-IV-510, Universidad Autonoma Madrid, Spain	Photoluminescence dynamics in GaAs along an optically induced Mott transition